CONDUCTIVITY AND THERMOELECTRIC-POWER OF AMORPHOUS-GERMANIUM AND AMORPHOUS SILICON

被引：58
作者：
LEWIS, AJ [1 ]
机构：
[1] HARVARD UNIV,DIV ENGN & APPL PHYS,CAMBRIDGE,MA 02138
来源：
PHYSICAL REVIEW B | 1976年 / 13卷 / 06期
关键词：
D O I：
10.1103/PhysRevB.13.2565
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：2565 / 2575
页数：11
相关论文
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