DRIFT MOBILITY OF HOLES IN N-TYPE GERMANIUM BOMBARDED BY FAST-NEUTRONS

被引:2
|
作者
ELDIFRAWI, AA [1 ]
YEH, TH [1 ]
CHRISTOPHER, JE [1 ]
GOSSICK, BR [1 ]
机构
[1] UNIV KENTUCKY,DEPT PHYS & ASTRON,LEXINGTON,KY 40506
关键词
D O I
10.1063/1.322312
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:272 / 276
页数:5
相关论文
共 50 条
  • [1] MOBILITY OF HOLES IN N-TYPE GE BOMBARDED BY FAST NEUTRONS
    YEH, TH
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (03): : 397 - &
  • [2] DEEP TRAPPING CENTERS IN N-TYPE GAAS BOMBARDED WITH FAST-NEUTRONS
    BRUDNYI, VN
    KOLIN, NG
    POTAPOV, AI
    SEMICONDUCTORS, 1993, 27 (02) : 145 - 147
  • [3] FAST NEUTRON-IRRADIATION EFFECTS ON DRIFT MOBILITY OF HOLES IN N-TYPE GERMANIUM
    ELDIFRAW.AA
    GOSSICK, BR
    CHRISTOP.JE
    YEH, TH
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1974, 19 (10): : 1117 - 1117
  • [4] INTERACTION OF LITHIUM WITH DISORDERED REGIONS FORMED BY FAST-NEUTRONS IN N-TYPE GERMANIUM
    SINISHCHUK, IK
    REZNIKOV, MY
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (09): : 1131 - 1132
  • [5] DRIFT MOBILITY IN NEUTRON IRRADIATED N-TYPE GERMANIUM
    CLOSSER, WH
    JOURNAL OF APPLIED PHYSICS, 1960, 31 (09) : 1693 - 1693
  • [6] EFFECT OF MONOENERGETIC FAST NEUTRONS ON N-TYPE GERMANIUM
    RUBY, SL
    SCHUPP, FD
    WOLLEY, ED
    PHYSICAL REVIEW, 1958, 111 (06): : 1493 - 1496
  • [7] Defects induced by irradiation with fast neutrons in n-type germanium
    Kovacevic, I.
    Pivac, B.
    Jacimovic, R.
    Khan, M. K.
    Markevich, V. P.
    Peaker, A. R.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 9 (4-5) : 606 - 612
  • [8] The impact of neutral impurity concentration on charge drift mobility in n-type germanium
    Mei, H.
    Wang, G. -J.
    Yang, G.
    Mei, D. -M.
    JOURNAL OF INSTRUMENTATION, 2017, 12
  • [9] HALL-MOBILITY IN N-TYPE GERMANIUM IRRADIATED WITH FAST ELECTRONS
    BEZLYUDNYI, SV
    KOLESNIKOV, NV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (10): : 1171 - 1172
  • [10] SEMIVACANCY-TYPE DEFECTS AND AMORPHIZATION OF GERMANIUM IRRADIATED WITH FAST-NEUTRONS
    BARDYSHEV, II
    ERCHAK, DP
    STELMAKH, VF
    TKACHEV, VD
    TOLSTYKH, VP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (12): : 1519 - 1520