A NEW AC MEASUREMENT TECHNIQUE TO ACCURATELY DETERMINE MOSFET CONSTANTS

被引：9

作者：

THOMA, MJ

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 09期

关键词：

D O I：

10.1109/T-ED.1984.21673

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1113 / 1116

页数：4

共 10 条

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[2] MEASUREMENT OF MOSFET CONSTANTS [J].

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PENG, KL ;

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RISCH, L .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (08) :959-961

[7] EXPERIMENTAL DERIVATION OF THE SOURCE AND DRAIN RESISTANCE OF MOS-TRANSISTORS [J].

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JOHNSTON, RL .

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[8]

Tsividis Y., 1982, International Electron Devices Meeting. Technical Digest, P274

[9]

TSIVIDIS Y, 1982, SOLID STATE ELECTRON, V25, P1099, DOI 10.1016/0038-1101(82)90148-4

[10] HIGH-ACCURACY MOS MODELS FOR COMPUTER-AIDED-DESIGN [J].

WHITE, MH ;

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LAMBOT, JP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (05) :899-906

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