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NOISE ANALYSIS FOR A SILICON PARTICLE DETECTOR WITH INTERNAL MULTIPLICATION
被引:10
作者
:
HAITZ, RH
论文数:
0
引用数:
0
h-index:
0
HAITZ, RH
SMITS, FM
论文数:
0
引用数:
0
h-index:
0
SMITS, FM
机构
:
来源
:
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
|
1966年
/ NS13卷
/ 03期
关键词
:
D O I
:
10.1109/TNS.1966.4324099
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:198 / +
页数:1
相关论文
共 14 条
[1]
MICROWAVE PHOTODIODES EXHIBITING MICROPLASMA-FREE CARRIER MULTIPLICATION (SI P-N JUNCTIONS 3 GC/SEC E)
ANDERSON, LK
论文数:
0
引用数:
0
h-index:
0
ANDERSON, LK
MCMULLIN, PG
论文数:
0
引用数:
0
h-index:
0
MCMULLIN, PG
DASARO, LA
论文数:
0
引用数:
0
h-index:
0
DASARO, LA
GOETZBERGER, A
论文数:
0
引用数:
0
h-index:
0
GOETZBERGER, A
[J].
APPLIED PHYSICS LETTERS,
1965,
6
(04)
: 62
-
+
[2]
UNIFORM SILICON P-N JUNCTIONS .2. IONIZATION RATES FOR ELECTRONS
CHYNOWETH, AG
论文数:
0
引用数:
0
h-index:
0
CHYNOWETH, AG
[J].
JOURNAL OF APPLIED PHYSICS,
1960,
31
(07)
: 1161
-
1165
[3]
ELAD E, PRIVATE COMMUNICATIO
[4]
AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS
GOETZBERGER, A
论文数:
0
引用数:
0
h-index:
0
GOETZBERGER, A
SCARLETT, RM
论文数:
0
引用数:
0
h-index:
0
SCARLETT, RM
HAITZ, RH
论文数:
0
引用数:
0
h-index:
0
HAITZ, RH
MCDONALD, B
论文数:
0
引用数:
0
h-index:
0
MCDONALD, B
[J].
JOURNAL OF APPLIED PHYSICS,
1963,
34
(06)
: 1591
-
+
[5]
HAITZ RH, TO BE PUBLISHED
[6]
HANSEN W, 871 NAT AC SCI PUBL, P202
[7]
HIGH-SPEED PHOTODIODE SIGNAL ENHANCEMENT AT AVALANCHE BREAKDOWN VOLTAGE
JOHNSON, KM
论文数:
0
引用数:
0
h-index:
0
JOHNSON, KM
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1965,
ED12
(02)
: 55
-
+
[8]
LYNCH WT, 1965, INTERNATIONAL ELECTR
[9]
MCINTYRE RJ, 1965, SOLID STATE DEVICE R
[10]
MELCHIOR H, 1965, INTERNATIONAL ELECTR
←
1
2
→
共 14 条
[1]
MICROWAVE PHOTODIODES EXHIBITING MICROPLASMA-FREE CARRIER MULTIPLICATION (SI P-N JUNCTIONS 3 GC/SEC E)
ANDERSON, LK
论文数:
0
引用数:
0
h-index:
0
ANDERSON, LK
MCMULLIN, PG
论文数:
0
引用数:
0
h-index:
0
MCMULLIN, PG
DASARO, LA
论文数:
0
引用数:
0
h-index:
0
DASARO, LA
GOETZBERGER, A
论文数:
0
引用数:
0
h-index:
0
GOETZBERGER, A
[J].
APPLIED PHYSICS LETTERS,
1965,
6
(04)
: 62
-
+
[2]
UNIFORM SILICON P-N JUNCTIONS .2. IONIZATION RATES FOR ELECTRONS
CHYNOWETH, AG
论文数:
0
引用数:
0
h-index:
0
CHYNOWETH, AG
[J].
JOURNAL OF APPLIED PHYSICS,
1960,
31
(07)
: 1161
-
1165
[3]
ELAD E, PRIVATE COMMUNICATIO
[4]
AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS
GOETZBERGER, A
论文数:
0
引用数:
0
h-index:
0
GOETZBERGER, A
SCARLETT, RM
论文数:
0
引用数:
0
h-index:
0
SCARLETT, RM
HAITZ, RH
论文数:
0
引用数:
0
h-index:
0
HAITZ, RH
MCDONALD, B
论文数:
0
引用数:
0
h-index:
0
MCDONALD, B
[J].
JOURNAL OF APPLIED PHYSICS,
1963,
34
(06)
: 1591
-
+
[5]
HAITZ RH, TO BE PUBLISHED
[6]
HANSEN W, 871 NAT AC SCI PUBL, P202
[7]
HIGH-SPEED PHOTODIODE SIGNAL ENHANCEMENT AT AVALANCHE BREAKDOWN VOLTAGE
JOHNSON, KM
论文数:
0
引用数:
0
h-index:
0
JOHNSON, KM
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1965,
ED12
(02)
: 55
-
+
[8]
LYNCH WT, 1965, INTERNATIONAL ELECTR
[9]
MCINTYRE RJ, 1965, SOLID STATE DEVICE R
[10]
MELCHIOR H, 1965, INTERNATIONAL ELECTR
←
1
2
→