ELECTRIC-FIELD STRENGTH AND PLASMA DELAY IN SILICON SURFACE-BARRIER DETECTOR

被引：0

作者：

KANNO, I

INBE, T

KANAZAWA, S

KIMURA, I

机构：

[1] Department of Nuclear Engineering, Kyoto University Yoshidahon-machi, Sakyo-ku, Kyoto

来源：

APPLIED RADIATION AND ISOTOPES | 1995年 / 46卷 / 6-7期

关键词：

D O I：

10.1016/0969-8043(95)00066-6

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

[No abstract available]

引用

收藏

页码：493 / 494

页数：2

相关论文

共 3 条

[1] THE INFLUENCE OF PLASMA EFFECTS ON THE TIMING PROPERTIES OF SURFACE-BARRIER DETECTORS FOR HEAVY-IONS [J].

BOHNE, W ;

GALSTER, W ;

GRABISCH, K ;

MORGENSTERN, H .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1985, 240 (01) :145-151

[2] A MODEL OF CHARGE COLLECTION IN A SILICON SURFACE-BARRIER DETECTOR [J].

KANNO, I .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1990, 61 (01) :129-137

[3] RESULTS ON RADIATION HARDNESS OF SILICON DETECTORS UP TO NEUTRON FLUENCES OF 10(15) N/CM(2) [J].

WUNSTORF, R ;

BENKERT, M ;

CLAUSSEN, N ;

CROITORU, N ;

FRETWURST, E ;

LINDSTROM, G ;

SCHULZ, T .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1992, 315 (1-3) :149-155