SUBSTRATE HOLE CURRENT AND OXIDE BREAKDOWN

被引：139

作者：

CHEN, IC

HOLLAND, S

YOUNG, KK

CHANG, C

HU, C

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 11期

关键词：

D O I：

10.1063/1.97563

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：669 / 671

页数：3

共 11 条

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[3]

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[7]

HOLLAND S, 1986, SEMICONDUCTOR SILICO, P470

[8] CURRENT RUNAWAY IN INSULATORS AFFECTED BY IMPACT IONIZATION AND RECOMBINATION [J].

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[9] SIO2-INDUCED SUBSTRATE CURRENT AND ITS RELATION TO POSITIVE CHARGE IN FIELD-EFFECT TRANSISTORS [J].

WEINBERG, ZA ;

FISCHETTI, MV ;

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JOURNAL OF APPLIED PHYSICS, 1986, 59 (03) :824-832

[10] INVESTIGATION OF THE SIO2-INDUCED SUBSTRATE CURRENT IN SILICON FIELD-EFFECT TRANSISTORS [J].

WEINBERG, ZA ;

FISCHETTI, MV .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :443-451

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