SUBSTRATE HOLE CURRENT AND OXIDE BREAKDOWN

[1] QUANTUM YIELD OF ELECTRON-IMPACT IONIZATION IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 302 - 309

[2] HOLE TRAPPING AND BREAKDOWN IN THIN SIO2 [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) : 164 - 167

[3] CHEN IC, 1985, IEEE T ELECTRON DEV, V32, P413, DOI 10.1109/T-ED.1985.21957

[4] IMPACT IONIZATION MODEL FOR DIELECTRIC INSTABILITY AND BREAKDOWN [J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 685 - 687

[5] 2 COMPONENTS OF TUNNELING CURRENT IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1983, 43 (01) : 106 - 108

[6] THE EFFECT OF GATE METAL AND SIO2 THICKNESS ON THE GENERATION OF DONOR STATES AT THE SI-SIO2 INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 418 - 425

[7] HOLLAND S, 1986, SEMICONDUCTOR SILICO, P470

[8] CURRENT RUNAWAY IN INSULATORS AFFECTED BY IMPACT IONIZATION AND RECOMBINATION [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (10) : 4364 - 4372

[9] SIO2-INDUCED SUBSTRATE CURRENT AND ITS RELATION TO POSITIVE CHARGE IN FIELD-EFFECT TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (03) : 824 - 832

[10] INVESTIGATION OF THE SIO2-INDUCED SUBSTRATE CURRENT IN SILICON FIELD-EFFECT TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 443 - 451

[1] QUANTUM YIELD OF ELECTRON-IMPACT IONIZATION IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 302 - 309

[2] HOLE TRAPPING AND BREAKDOWN IN THIN SIO2 [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) : 164 - 167

[3] CHEN IC, 1985, IEEE T ELECTRON DEV, V32, P413, DOI 10.1109/T-ED.1985.21957

[4] IMPACT IONIZATION MODEL FOR DIELECTRIC INSTABILITY AND BREAKDOWN [J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 685 - 687

[5] 2 COMPONENTS OF TUNNELING CURRENT IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1983, 43 (01) : 106 - 108

[6] THE EFFECT OF GATE METAL AND SIO2 THICKNESS ON THE GENERATION OF DONOR STATES AT THE SI-SIO2 INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 418 - 425

[7] HOLLAND S, 1986, SEMICONDUCTOR SILICO, P470

[8] CURRENT RUNAWAY IN INSULATORS AFFECTED BY IMPACT IONIZATION AND RECOMBINATION [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (10) : 4364 - 4372

[9] SIO2-INDUCED SUBSTRATE CURRENT AND ITS RELATION TO POSITIVE CHARGE IN FIELD-EFFECT TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (03) : 824 - 832

[10] INVESTIGATION OF THE SIO2-INDUCED SUBSTRATE CURRENT IN SILICON FIELD-EFFECT TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 443 - 451