PLASMA DYNAMICS IN GAAS UNDER STRONG PICOSECOND SURFACE EXCITATION

被引:30
作者
AMAND, T
COLLET, J
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D O I
10.1016/0022-3697(85)90019-8
中图分类号
O6 [化学];
学科分类号
0703 ;
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页码:1053 / 1059
页数:7
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共 28 条
[1]   TIME EVOLUTION OF NON-EQUILIBRIUM PHOTO-EXCITED PLASMA IN POLAR SEMICONDUCTORS [J].
ALGARTE, ACS ;
LUZZI, R .
PHYSICAL REVIEW B, 1983, 27 (12) :7563-7574
[2]   AUGER RECOMBINATION IN GAAS AN GASB [J].
BENZ, G ;
CONRADT, R .
PHYSICAL REVIEW B, 1977, 16 (02) :843-855
[3]   SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J].
BLAKEMORE, JS .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :R123-R181
[4]   ELECTRON-HOLE LIQUIDS IN SEMICONDUCTORS [J].
BRINKMAN, WF ;
RICE, TM .
PHYSICAL REVIEW B, 1973, 7 (04) :1508-1523
[5]   CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J].
CASEY, HC ;
STERN, F .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) :631-643
[6]   NUMERICAL APPROACH TO NON-EQUILIBRIUM CARRIER RELAXATION IN PICOSECOND AND SUBPICOSECOND PHYSICS [J].
COLLET, J ;
AMAND, T ;
PUGNET, M .
PHYSICS LETTERS A, 1983, 96 (07) :368-374
[7]   COOLING OF HIGH-DENSITY ELECTRON-HOLE PLASMA [J].
COLLET, J ;
CORNET, A ;
PUGNET, M ;
AMAND, T .
SOLID STATE COMMUNICATIONS, 1982, 42 (12) :883-887
[8]   GENERATION OF NONEQUILIBRIUM OPTICAL PHONONS IN GAAS AND THEIR APPLICATION IN STUDYING INTERVALLEY ELECTRON-PHONON SCATTERING [J].
COLLINS, CL ;
YU, PY .
PHYSICAL REVIEW B, 1984, 30 (08) :4501-4515
[9]  
CORNET A, 1981, J PHYS PARIS S10, V42, pC7
[10]   ELECTRON-HOLE PLASMA IN DIRECT GAP SEMICONDUCTORS - A NEW NON-EQUILIBRIUM MODEL [J].
FORCHEL, A ;
SCHWEIZER, H ;
NATHER, H ;
ROMANEK, KM ;
FISCHER, J ;
MAHLER, G .
PHYSICA B & C, 1983, 117 (MAR) :336-338