PREPARATION AND PROPERTIES OF III-V NITRIDE THIN-FILMS

被引：177

作者：

KUBOTA, K

KOBAYASHI, Y

FUJIMOTO, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 07期

关键词：

D O I：

10.1063/1.344181

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2984 / 2988

页数：5

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[1] EFFECTS OF THE BUFFER LAYER IN METALORGANIC VAPOR-PHASE EPITAXY OF GAN ON SAPPHIRE SUBSTRATE
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KOIDE, N
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[J]. THIN SOLID FILMS, 1988, 163 : 415 - 420
[2] OPTICAL STUDIES OF PHONONS AND ELECTRONS IN GALLIUM NITRIDE
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[J]. SOLID STATE COMMUNICATIONS, 1970, 8 (15) : 1227 - +
[3] ELECTRON-MOBILITY IN INDIUM NITRIDE
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FOLEY, CP
[J]. ELECTRONICS LETTERS, 1984, 20 (25-2) : 1066 - 1068
[4] IMPROVEMENTS ON THE ELECTRICAL AND LUMINESCENT PROPERTIES OF REACTIVE MOLECULAR-BEAM EPITAXIALLY GROWN GAN FILMS BY USING AIN-COATED SAPPHIRE SUBSTRATES
YOSHIDA, S
MISAWA, S
GONDA, S
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 427 - 429