STABILITY OF STRAINED QUANTUM-WELL FIELD-EFFECT TRANSISTOR STRUCTURES

被引：51

作者：

PEERCY, PS

DODSON, BW

TSAO, JY

JONES, ED

MYERS, DR

ZIPPERIAN, TE

DAWSON, LR

BIEFELD, RM

KLEM, JF

HILLS, CR

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 12期

关键词：

D O I：

10.1109/55.20415

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：621 / 623

页数：3

共 15 条

[1] STIMULATED-EMISSION IN STRAINED-LAYER QUANTUM-WELL HETEROSTRUCTURES [J].

CAMRAS, MD ;

BROWN, JM ;

HOLONYAK, N ;

NIXON, MA ;

KALISKI, RW ;

LUDOWISE, MJ ;

DIETZE, WT ;

LEWIS, CR .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6183-6189

[2] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J].

DODSON, BW ;

TSAO, JY .

APPLIED PHYSICS LETTERS, 1987, 51 (17) :1325-1327

[3] CORRECTION [J].

DODSON, BW .

APPLIED PHYSICS LETTERS, 1988, 52 (10) :852-852

[4] P-CHANNEL, STRAINED QUANTUM-WELL, FIELD-EFFECT TRANSISTOR [J].

DRUMMOND, TJ ;

ZIPPERIAN, TE ;

FRITZ, IJ ;

SCHIRBER, JE ;

PLUT, TA .

APPLIED PHYSICS LETTERS, 1986, 49 (08) :461-463

[5]

FRITZ IJ, 1986, I PHYS C SER, V83, P233

[6] CONTROVERSY OF CRITICAL LAYER THICKNESS FOR INGAAS/GAAS STRAINED-LAYER EPITAXY [J].

GOURLEY, PL ;

FRITZ, IJ ;

DAWSON, LR .

APPLIED PHYSICS LETTERS, 1988, 52 (05) :377-379

[7]

Henderson T., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P464

[8]

JONES ED, 1988, 1988 EL MAT C BOULD

[9] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J].

MATTHEWS, JW ;

BLAKESLEE, AE .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :118-125

[10] CHARACTERIZATION OF ION-IMPLANTATION DOPING OF STRAINED-LAYER SUPERLATTICES .1. STRUCTURAL-PROPERTIES [J].

MYERS, DR ;

PICRAUX, ST ;

DOYLE, BL ;

ARNOLD, GW ;

BIEFELD, RM .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) :3631-3640

← 1 2 →