LOW-PRESSURE DEPOSITION OF HIGH-QUALITY SIO2-FILMS BY PYROLYSIS OF TETRAETHYLORTHOSILICATE

被引：123
作者：
BECKER, FS
PAWLIK, D
ANZINGER, H
SPITZER, A
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 06期
关键词：
D O I：
10.1116/1.583673
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：1555 / 1563
页数：9
相关论文
共 51 条
[1]   STRESSES IN SIO2 FILMS OBTAINED FROM THERMAL DECOMPOSITION OF TETRAETHYLORTHOSILICATE - EFFECT OF HEAT TREATMENT AND HUMIDITY [J].
ABOAF, JA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) :1732-&
[2]  
Adams A. C., 1983, VLSI technology, P93
[3]   DEPOSITION OF SILICON DIOXIDE FILMS AT REDUCED PRESSURE [J].
ADAMS, AC ;
CAPIO, CD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) :1042-1046
[4]   LOW-TEMPERATURE DEPOSITION OF SILICON OXIDE FILMS [J].
ALT, LL ;
ING, SW ;
LAENDLE, KW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) :465-465
[5]   PROPERTIES OF SILICON DIOXIDE FILMS ON SILICON AS DIFFUSION MASKS FOR BORON [J].
ANAND, KV ;
MCKELL, HD ;
NORTHROP, DC .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (11) :1722-&
[6]   PROCESS AND FILM CHARACTERIZATION OF LOW-PRESSURE TETRAETHYLORTHOSILICATE-BOROPHOSPHOSILICATE GLASS [J].
BECKER, FS ;
PAWLIK, D ;
SCHAFER, H ;
STAUDIGL, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (03) :732-744
[7]  
BECKER FS, 1986, ELECTROCHEMICAL SOC, V862, P394
[8]  
BECKER FS, IN PRESS J ELECTROCH
[9]   PLASMA ASSISTED PHYSICAL VAPOR-DEPOSITION PROCESSES - A REVIEW [J].
BUNSHAH, RF ;
DESHPANDEY, CV .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1985, 3 (03) :553-560
[10]  
BURT DL, 1976, Patent No. 3934060
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