FORMATION OF ULTRATHIN SINGLE-CRYSTAL SILICIDE FILMS ON SI - SURFACE AND INTERFACIAL STABILIZATION OF SI-NISI2 EPITAXIAL STRUCTURES

被引：428
作者：
TUNG, RT
GIBSON, JM
POATE, JM
机构：
来源：
PHYSICAL REVIEW LETTERS | 1983年 / 50卷 / 06期
关键词：
D O I：
10.1103/PhysRevLett.50.429
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：429 / 432
页数：4
相关论文
共 14 条
[1]  
BAGLIN J, 1980, THIN FILM INTERFACES
[2]   NI ON SI(111) - REACTIVITY AND INTERFACE STRUCTURE [J].
CHEUNG, NW ;
CULBERTSON, RJ ;
FELDMAN, LC ;
SILVERMAN, PJ ;
WEST, KW ;
MAYER, JW .
PHYSICAL REVIEW LETTERS, 1980, 45 (02) :120-124
[3]   INTERFACE AND SURFACE-STRUCTURE OF EPITAXIAL NISI2 FILMS [J].
CHIU, KCR ;
POATE, JM ;
ROWE, JE ;
SHENG, TT ;
CULLIS, AG .
APPLIED PHYSICS LETTERS, 1981, 38 (12) :988-990
[4]  
COMIN F, UNPUB
[5]  
FRANCIOSI A, 1982, J VAC SCI TECHNOL, V21, P627
[6]  
GIBSON JM, 1982, APPL PHYS LETT, V41, P818, DOI 10.1063/1.93699
[7]   XPS STUDY OF THE CHEMICAL-STRUCTURE OF THE NICKEL-SILICON INTERFACE [J].
GRUNTHANER, PJ ;
GRUNTHANER, FJ ;
MAYER, JW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :924-929
[8]   METAL-SILICON INTERFACE FORMATION - THE NI-SI AND PD-SI SYSTEMS [J].
GRUNTHANER, PJ ;
GRUNTHANER, FJ ;
MADHUKAR, A ;
MAYER, JW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :649-656
[9]   EPITAXIAL-GROWTH OF THE NICKEL DISILICIDE PHASE [J].
LAU, SS ;
CHEUNG, NW .
THIN SOLID FILMS, 1980, 71 (01) :117-127
[10]  
Tu K. N., 1978, THIN FILMS INTERDIFF
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