INP/INGAAS HETEROJUNCTION PHOTO-TRANSISTOR WITH INTEGRATED LIGHT-EMITTING DIODE

被引：11
作者：
CAMPBELL, JC
DENTAI, AG
机构：
来源：
APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 02期
关键词：
D O I：
10.1063/1.93458
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：192 / 193
页数：2
相关论文
共 8 条
[1]  
Alavi K. T., 1981, P SOC PHOTO-OPT INS, V272, P38
[2]  
CAMPBELL JC, 1981, IEEE J QUANTUM ELECT, V17, P264, DOI 10.1109/JQE.1981.1071072
[3]   HETEROJUNCTION PHOTOTRANSISTORS FOR LONG-WAVELENGTH OPTICAL RECEIVERS [J].
CAMPBELL, JC ;
OGAWA, K .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1203-1208
[4]   MODULATED BARRIER PHOTO-DIODE - A NEW MAJORITY-CARRIER PHOTODETECTOR [J].
CHEN, CY ;
CHO, AY ;
GARBINSKI, PA ;
BETHEA, CG ;
LEVINE, BF .
APPLIED PHYSICS LETTERS, 1981, 39 (04) :340-342
[5]   FAST RESPONSE INP-INGAASP HETEROJUNCTION PHOTOTRANSISTORS [J].
FRITZSCHE, D ;
KUPHAL, E ;
AULBACH, R .
ELECTRONICS LETTERS, 1981, 17 (05) :178-179
[6]  
MILANO RA, 1981, P SOC PHOTO-OPT INST, V272, P43, DOI 10.1117/12.965691
[7]   INGAASP-INP HETEROJUNCTION PHOTOTRANSISTORS AND LIGHT AMPLIFIERS [J].
SASAKI, A ;
KUZUHARA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) :L283-L286
[8]  
Smith R., 1980, SEMICONDUCTOR DEVICE, P89, DOI DOI 10.1007/3-540-11348-7_26
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