MECHANISM OF GROWTH OF ULTRATHIN SIO2 LAYERS ON SILICIDE SUBSTRATES

被引：6

作者：

CROS, A

机构：

来源：

SURFACE SCIENCE | 1985年 / 162卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(85)90969-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：702 / 707

页数：6

共 12 条

[1] AUGER-UPS STUDY OF INTRINSIC AND SI-STABILIZED OXIDES OF PALLADIUM [J].

BADER, SD ;

RICHTER, L ;

ORENT, TW .

SURFACE SCIENCE, 1982, 115 (03) :501-512

[2]

BRIGGS D, 1983, PRACTICAL SURFACE AN, P133

[3] SILICON SURFACES - METALLIC CHARACTER, OXIDATION AND ADHESION [J].

CROS, A .

JOURNAL DE PHYSIQUE, 1983, 44 (06) :707-711

[4] OXIDATION BEHAVIOR OF PD-SI COMPOUNDS [J].

CROS, A ;

POLLAK, RA ;

TU, KN .

THIN SOLID FILMS, 1983, 104 (1-2) :221-225

[5]

Fehlner F.P., 1970, OXID MET, V2, P59

[6] HIGH-RESOLUTION X-RAY PHOTOELECTRON-SPECTROSCOPY AS A PROBE OF LOCAL ATOMIC-STRUCTURE - APPLICATION TO AMORPHOUS SIO2 AND THE SI-SIO2 INTERFACE [J].

GRUNTHANER, FJ ;

GRUNTHANER, PJ ;

VASQUEZ, RP ;

LEWIS, BF ;

MASERJIAN, J ;

MADHUKAR, A .

PHYSICAL REVIEW LETTERS, 1979, 43 (22) :1683-1686

[7] CHEMICAL BONDING AND CHARGE REDISTRIBUTION - VALENCE BAND AND CORE LEVEL CORRELATIONS FOR THE NI/SI, PD/SI, AND PT/SI SYSTEMS [J].

GRUNTHANER, PJ ;

GRUNTHANER, FJ ;

MADHUKAR, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :680-683

[8] OXYGEN-CHEMISORPTION AND OXIDE FORMATION ON SI(111) AND SI(100) SURFACES [J].

HOLLINGER, G ;

HIMPSEL, FJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :640-645

[9]

KECK KE, 1983, NOV FRANC SWED C SUR

[10] A PHOTOEMISSION-STUDY OF CLEAN AND OXIDIZED NB3SN [J].

MILLER, JN ;

LINDAU, I ;

SPICER, WE .

PHYSICS LETTERS A, 1982, 88 (02) :97-99

← 1 2 →