TEMPERATURE-DEPENDENT AL/GAAS(110) INTERFACE FORMATION AND ADATOM ENERGY REFERENCES

被引：22
作者：
ANDERSON, SG
ALDAO, CM
WADDILL, GD
VITOMIROV, IM
SEVERTSON, SJ
WEAVER, JH
机构：
来源：
PHYSICAL REVIEW B | 1989年 / 40卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.40.8305
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：8305 / 8312
页数：8
相关论文
共 38 条
[1]   3D TRANSITION-METALS ON INP(110) - A COMPARATIVE-STUDY OF REACTIVE INTERFACE EVOLUTION [J].
ALDAO, CM ;
VITOMIROV, IM ;
XU, F ;
WEAVER, JH .
PHYSICAL REVIEW B, 1988, 37 (11) :6019-6026
[2]   TEMPERATURE EFFECTS FOR TI/GAAS(110) INTERFACE FORMATION INVOLVING CLUSTER AND ATOM DEPOSITION [J].
ALDAO, CM ;
WADDILL, GD ;
ANDERSON, SG ;
WEAVER, JH .
PHYSICAL REVIEW B, 1989, 40 (05) :2932-2939
[3]   DOPANT CONCENTRATION DEPENDENCES AND SYMMETRIC FERMI-LEVEL MOVEMENT FOR METAL N-TYPE AND P-TYPE GAAS(110) INTERFACES FORMED AT 60-K [J].
ALDAO, CM ;
ANDERSON, SG ;
CAPASSO, C ;
WADDILL, GD ;
VITOMIROV, IM ;
WEAVER, JH .
PHYSICAL REVIEW B, 1989, 39 (17) :12977-12980
[4]  
ANDERSON S, UNPUB
[5]   ELECTRON-ENERGY LOSS SPECTROSCOPY FROM GAAS(110) INTERFACES [J].
BONAPACE, CR ;
TU, DW ;
LI, K ;
KAHN, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1099-1102
[6]  
BONAPACE CR, 1984, J PHYS-PARIS, V45, pC5
[7]   THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].
Brillson, L. J. .
SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326
[8]   KINETICS STUDY OF INITIAL-STAGE BAND BENDING AT METAL GAAS(110) INTERFACES [J].
CAO, R ;
MIYANO, K ;
KENDELEWICZ, T ;
CHIN, KK ;
LINDAU, I ;
SPICER, WE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :998-1002
[9]   ELECTRONIC-STRUCTURE OF THE AL-GAAS(110) SURFACE CHEMISORPTION SYSTEM [J].
CHELIKOWSKY, JR ;
CHADI, DJ ;
COHEN, ML .
PHYSICAL REVIEW B, 1981, 23 (08) :4013-4022
[10]   PHOTOEMISSION FROM SURFACE-ATOM CORE LEVELS, SURFACE DENSITIES OF STATES, AND METAL-ATOM CLUSTERS - A UNIFIED PICTURE [J].
CITRIN, PH ;
WERTHEIM, GK .
PHYSICAL REVIEW B, 1983, 27 (06) :3176-3200
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