LOW-ENERGY ELECTRON-LOSS SPECTROSCOPY OF GE SURFACES

被引：42
作者：
LUDEKE, R [1 ]
KOMA, A [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
PHYSICAL REVIEW B | 1976年 / 13卷 / 02期
关键词：
D O I：
10.1103/PhysRevB.13.739
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：739 / 749
页数：11
相关论文
共 51 条
[1]   SURFACE STATES AND SURFACE BONDS OF SI(111) [J].
APPELBAUM, JA ;
HAMANN, DR .
PHYSICAL REVIEW LETTERS, 1973, 31 (02) :106-109
[2]   SURFACE-POTENTIAL, CHARGE-DENSITY, AND IONIZATION-POTENTIAL FOR SI(111) - SELF-CONSISTENT CALCULATION [J].
APPELBAUM, JA ;
HAMANN, DR .
PHYSICAL REVIEW LETTERS, 1974, 32 (05) :225-228
[3]   REEVALUATION OF X-RAY ATOMIC ENERGY LEVELS [J].
BEARDEN, JA ;
BURR, AF .
REVIEWS OF MODERN PHYSICS, 1967, 39 (01) :125-&
[4]  
BOONSTRA AH, 1968, PHILIPS RES REP S3
[5]   CALORIMETRIC DETERMINATION OF THE HEAT OF ADSORPTION OF OXYGEN ON EVAPORATED FILMS OF GERMANIUM AND SILICON [J].
BRENNAN, D ;
HAYWARD, DO ;
TRAPNELL, BMW .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 :117-123
[6]   SURFACE PHOTOVOLTAGE SPECTROSCOPY OF ELECTRONIC SURFACE STATES ON CLEAVED GERMANIUM (111) SURFACES [J].
BUCHEL, M ;
LUTH, H .
SURFACE SCIENCE, 1975, 50 (02) :451-464
[7]  
CARDONA M, 1970, 10 P INT C PHYS SEM, P209
[8]   TIGHT-BINDING CALCULATIONS OF (111) SURFACE DENSITIES OF STATES OF GE AND GAAS [J].
CHADI, DJ ;
COHEN, ML .
SOLID STATE COMMUNICATIONS, 1975, 16 (06) :691-694
[9]  
DUKE CB, 1973, ELECTRON EMISSION SP
[10]   PHOTOEMISSION PARTIAL YIELD MEASUREMENTS OF UNOCCUPIED INTRINSIC SURFACE STATES FOR GE(111) AND GAAS(110) [J].
EASTMAN, DE ;
FREEOUF, JL .
PHYSICAL REVIEW LETTERS, 1974, 33 (27) :1601-1605
123456