IMPROVED DIELECTRIC RELIABILITY OF SIO2-FILMS WITH POLYCRYSTALLINE SILICON ELECTRODES

被引：27

作者：

OSBURN, CM ^{[1
]}

BASSOUS, E ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 01期

关键词：

D O I：

10.1149/1.2134169

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：89 / 92

页数：4

共 15 条

[1] EFFECTS OF MATERIAL AND PROCESSING PARAMETERS ON DIELECTRIC STRENGTH OF THERMALLY GROWN SIO2 FILMS
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[2] DIELECTRIC BREAKDOWN INDUCED BY SODIUM IN MOS STRUCTURES
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[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 527 - 528
[3] POLARIZATION OF THIN PHOSPHOSILICATE GLASS FILMS IN MGOS STRUCTURES
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[4] A WATER-AMINE-COMPLEXING AGENT SYSTEM FOR ETCHING SILICON
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (09) : 965 - &
[5] DEPENDENCE OF MOS DEVICE RADIATION-SENSITIVITY ON OXIDE IMPURITIES
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[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (06) : 256 - 263
[6] MECHANISM OF SELF-HEALING ELECTRICAL BREAKDOWN IN MOS STRUCTURES
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (11) : 788 - +
[7] I-V CHARACTERISTICS OF MOS CAPACITORS WITH POLYCRYSTALLINE SILICON FIELD PLATES
NEUGEBAUER, CA
BURGESS, JF
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MUNDY, JL
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) : 5041 - 5044
[8] ACCELERATED DIELECTRIC BREAKDOWN OF SILICON DIOXIDE FILMS
OSBURN, CM
CHOU, NJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (10) : 1377 - 1384
[9] EFFECT OF MOBILE SODIUM IONS ON FIELD ENHANCEMENT DIELECTRIC BREAKDOWN IN SIO2 FILMS ON SILICON
OSBURN, CM
RAIDER, SI
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (10) : 1369 - 1376
[10] DIELECTRIC BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON .1. MEASUREMENT AND INTERPRETATION
OSBURN, CM
ORMOND, DW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (05) : 591 - +

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