DETERMINATION OF STEP-EDGE BARRIERS TO INTERLAYER TRANSPORT FROM SURFACE-MORPHOLOGY DURING THE INITIAL-STAGES OF HOMOEPITAXIAL GROWTH

被引：47

作者：

SMILAUER, P

HARRIS, S

机构：

[1] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED, BLACKETT LAB, INTERDISCIPLINARY RES CTR SEMICOND MAT, LONDON SW7 2BZ, ENGLAND

[2] SUNY STONY BROOK, COLL ENGN & APPL SCI, STONY BROOK, NY 11794 USA

[3] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED, DEPT PHYS, LONDON SW7 2BZ, ENGLAND

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.51.14798

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We use analytic formulas obtained from a simple model of crystal growth by molecular-beam epitaxy to determine step-edge barriers to interlayer transport. The method is based on information about the surface morphology at the onset of nucleation on top of first-layer islands in the submonolayer coverage regime of homoepitaxial growth. The formulas are tested using kinetic Monte Carlo simulations of a solid-on-solid model and applied to estimate step-edge barriers from scanning-tunneling microscopy data on initial stages of Fe(001), Pt(111), and Ag(111) homoepitaxy. © 1995 The American Physical Society.

引用

页码：14798 / 14801

页数：4

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