THERMAL SULFIDATION ON INP

被引：17

作者：

DESCOUTS, B ^{[1
]}

DURAND, J ^{[1
]}

COT, L ^{[1
]}

POST, G ^{[1
]}

SCAVENEC, A ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,LAB BAGNEUX,F-92220 BAGNEUX,FRANCE

来源：

THIN SOLID FILMS | 1985年 / 131卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(85)90383-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：139 / 148

页数：10

共 15 条

[1]

BALDWIN BA, 1975, ASLE T, V19, P335

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[3] AN INVESTIGATION BY ELECTRON-SPECTROSCOPY FOR CHEMICAL-ANALYSIS OF CHEMICAL TREATMENTS OF THE (100) SURFACE OF N-TYPE INP EPITAXIAL LAYERS FOR LANGMUIR FILM DEPOSITION [J].

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FOK, T ;

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SYKES, RW .

THIN SOLID FILMS, 1980, 70 (02) :261-283

[4] EVAPORATION OF INP UNDER KNUDSEN (EQUILIBRIUM) AND LANGMUIR (FREE) EVAPORATION CONDITIONS [J].

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[5] N-CHANNEL MISFETS ON SEMI-INSULATING INP FOR LOGIC APPLICATIONS [J].

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ELECTRONICS LETTERS, 1982, 18 (02) :102-103

[6] ENHANCEMENT TYPE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH PLASMA ANODIC ALUMINUM-OXIDE AS THE GATE INSULATOR [J].

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APPLIED PHYSICS LETTERS, 1982, 40 (08) :712-713

[7] THE EFFECTS OF ANNEALING METAL-INSULATOR-SEMICONDUCTOR DIODES EMPLOYING A THERMAL NITRIDE-INP INTERFACE [J].

HIROTA, Y ;

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KOBAYASHI, T .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :536-540

[8]

KAWAKAMI T, 1979, ELECTRON LETT, V15, P503

[9] EFFECT OF PYROLYTIC AL2O3 DEPOSITION TEMPERATURE ON INVERSION-MODE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR [J].

KOBAYASHI, T ;

OKAMURA, M ;

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SHINODA, Y ;

HIROTA, Y .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) :6434-6436

[10] ION-IMPLANTED N-CHANNEL INP.IGFET AND ITS LOW-FREQUENCY CHARACTERISTICS [J].

OHMACHI, Y ;

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (07) :1425-1426

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