WORK FUNCTION AND PHOTOTHRESHOLD OF LAYERED METAL DICHALCOGENIDES

被引:93
作者
SHIMADA, T [1 ]
OHUCHI, FS [1 ]
PARKINSON, BA [1 ]
机构
[1] DUPONT CO INC,DEPT CENT RES & DEV,WILMINGTON,DE 19880
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 5A期
关键词
WORK FUNCTION; PHOTOTHRESHOLD; LAYERED MATERIAL; TRANSITION METAL DICHALCOGENIDE;
D O I
10.1143/JJAP.33.2696
中图分类号
O59 [应用物理学];
学科分类号
摘要
Work functions and photothreshold values of various layered metal dichalcogenides (ZrSe2, HfSe2, NbSe2, 1T-TaS2, 2H-TaS2, MoS2, MoSe2, alpha-MoTe2, SnS2, SnSe2) have been measured by a photoemission technique. The measured photothreshold values, except for Sn compounds, are compared with the calculated values based on various band models. The agreement between the observed and calculated values is satisfactory for most of the materials.
引用
收藏
页码:2696 / 2698
页数:3
相关论文
共 24 条
  • [1] BAND STRUCTURES OF SOME TRANSITION-METAL DICHALCOGENIDES .3. GROUP VI A - TRIGONAL PRISM MATERIALS
    BROMLEY, RA
    YOFFE, AD
    MURRAY, RB
    [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (07): : 759 - &
  • [2] ELECTRONIC BAND-STRUCTURE AND BONDING IN TRANSITION-METAL LAYERED DICHALCOGENIDES BY ATOMIC ORBITAL METHODS
    BULLETT, DW
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (22): : 4501 - 4514
  • [3] SCANNING TUNNELLING MICROSCOPY OF CHARGE-DENSITY WAVES IN TRANSITION-METAL CHALCOGENIDES
    COLEMAN, RV
    GIAMBATTISTA, B
    HANSMA, PK
    JOHNSON, A
    MCNAIRY, WW
    SLOUGH, CG
    [J]. ADVANCES IN PHYSICS, 1988, 37 (06) : 559 - 644
  • [4] DONI E, 1986, ELECTRONIC STRUCTURE, pCH1
  • [5] Ertl G., 1985, LOW ENERGY ELECT SUR, P77
  • [6] ANCHORING STRUCTURE OF SMECTIC LIQUID-CRYSTAL LAYERS ON MOS2 OBSERVED BY SCANNING TUNNELING MICROSCOPY
    HARA, M
    IWAKABE, Y
    TOCHIGI, K
    SASABE, H
    GARITO, AF
    YAMADA, A
    [J]. NATURE, 1990, 344 (6263) : 228 - 230
  • [7] HARRISON WA, 1980, ELECTRONIC STRUCTURE
  • [8] STABILITY OF PHOTOELECTRODES CONTROLLED BY ELECTRONIC FACTORS - LAYERED CHALCOGENIDES OF GROUP IV B
    JAEGERMANN, W
    PETTENKOFER, C
    [J]. BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1988, 92 (11): : 1354 - 1358
  • [9] HALOGEN ADSORPTION ON N-MOSE2 (0001) VANDERWAALS FACES - SIMULATION OF ELECTROCHEMICAL JUNCTIONS IN UHV
    JAEGERMANN, W
    [J]. BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1988, 92 (04): : 537 - 544
  • [10] JAEGERMANN W, 1992, PHOTOELECTROCHEMISTR, P239