ELECTRONIC EXCITATION-ENERGIES IN SCHOTTKY BARRIERS

被引：9

作者：

CHARLESWORTH, JPA ^{[1
]}

GODBY, RW ^{[1
]}

NEEDS, RJ ^{[1
]}

SHAM, LJ ^{[1
]}

机构：

[1] UNIV CALIF SAN DIEGO,DEPT PHYS,LA JOLLA,CA 92093

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1992年 / 14卷 / 03期

关键词：

D O I：

10.1016/0921-5107(92)90308-V

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present the results of recent research on the electronic structure of Schottky barriers. This is in two parts: (i) ab initio calculations of the equilibrium geometry and electronic structure of a GaAs(110)-Al Schottky barrier, and (ii) a discussion of the significance of Schottky barrier heights calculated in exact density functional theory.

引用

页码：262 / 265

页数：4

共 17 条

[1] EXACT RESULTS FOR THE CHARGE AND SPIN-DENSITIES, EXCHANGE-CORRELATION POTENTIALS, AND DENSITY-FUNCTIONAL EIGENVALUES [J].