ELECTRONIC EXCITATIONS ON SI(100)(2X1)

被引：55

作者：

FARRELL, HH

STUCKI, F

ANDERSON, J

FRANKEL, DJ

LAPEYRE, GJ

LEVINSON, M

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

[2] MONTANA STATE UNIV,DEPT PHYS,CTR RES SURFACE SCI,BOZEMAN,MT 59717

来源：

PHYSICAL REVIEW B | 1984年 / 30卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.30.721

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：721 / 725

页数：5

共 17 条

[11] ELECTRONIC-STRUCTURES OF THE MONOHYDRIDE (2X1)-H AND THE DIHYDRIDE (1X1)-2H SI(001) SURFACES STUDIED BY ANGLE-RESOLVED ELECTRON-ENERGY-LOSS SPECTROSCOPY [J].

MARUNO, S ;

IWASAKI, H ;

HORIOKA, K ;

LI, ST ;

NAKAMURA, S .

PHYSICAL REVIEW B, 1983, 27 (07) :4110-4116

[12] ELECTRON-DIFFRACTION STUDY OF STRUCTURE OF SILICON (100) [J].

POPPENDIECK, TD ;

NGOC, TC ;

WEBB, MB .

SURFACE SCIENCE, 1978, 75 (02) :287-315

[13] SURFACE-STATE TRANSITIONS OF SILICON IN ELECTRON ENERGY-LOSS SPECTRA [J].

ROWE, JE ;

IBACH, H .

PHYSICAL REVIEW LETTERS, 1973, 31 (02) :102-105

[14] INTERPLAY OF MONOHYDRIDE PHASE AND A NEWLY DISCOVERED DIHYDRIDE PHASE IN CHEMISORPTION OF H ON SI(100)2X1 [J].

SAKURAI, T ;

HAGSTRUM, HD .

PHYSICAL REVIEW B, 1976, 14 (04) :1593-1596

[15] STRUCTURE AND ADSORPTION CHARACTERISTICS OF CLEAN SURFACES OF GERMANIUM AND SILICON [J].

SCHLIER, RE ;

FARNSWORTH, HE .

JOURNAL OF CHEMICAL PHYSICS, 1959, 30 (04) :917-926

[16]

STUCKI F, UNPUB SOLID STATE CO

[17] THEORETICAL DETERMINATION OF SURFACE ATOMIC GEOMETRY - SI(001)-(2X1) [J].

YIN, MT ;

COHEN, ML .

PHYSICAL REVIEW B, 1981, 24 (04) :2303-2306

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