ELECTRONIC EXCITATIONS ON SI(100)(2X1)

被引：55

作者：

FARRELL, HH

STUCKI, F

ANDERSON, J

FRANKEL, DJ

LAPEYRE, GJ

LEVINSON, M

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

[2] MONTANA STATE UNIV,DEPT PHYS,CTR RES SURFACE SCI,BOZEMAN,MT 59717

来源：

PHYSICAL REVIEW B | 1984年 / 30卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.30.721

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：721 / 725

页数：5

共 17 条

[1] THEORY OF RECONSTRUCTION INDUCED SUBSURFACE STRAIN - APPLICATION TO SI(100) [J].

APPELBAUM, JA ;

HAMANN, DR .

SURFACE SCIENCE, 1978, 74 (01) :21-33

[2] SECONDARY RECONSTRUCTION ON SI(100) SURFACE VIA A CHARGE-DENSITY WAVE [J].

APPELBAUM, JA ;

BARAFF, GA ;

HAMANN, DR .

PHYSICAL REVIEW LETTERS, 1976, 36 (08) :450-452

[3] DIFFRACTION OF HE AT THE RECONSTRUCTED SI(100) SURFACE [J].

CARDILLO, MJ ;

BECKER, GE .

PHYSICAL REVIEW B, 1980, 21 (04) :1497-1510

[4] SURFACE-STATE OPTICAL-ABSORPTION ON THE CLEAN SI(100)2X1 SURFACE [J].

CHABAL, YJ ;

CHRISTMAN, SB ;

CHABAN, EE ;

YIN, MT .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :1241-1242

[5] SI(100) SURFACES - ATOMIC AND ELECTRONIC-STRUCTURES [J].

CHADI, DJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1290-1296

[6]

FARRELL HH, UNPUB

[7] PHOTOEMISSION-STUDIES OF INTRINSIC SURFACE-STATES ON SI(100) [J].

HIMPSEL, FJ ;

EASTMAN, DE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1297-1299

[8] VIBRATIONAL STUDY OF THE INITIAL-STAGES OF THE OXIDATION OF SI(111) AND SI(100) SURFACES [J].

IBACH, H ;

BRUCHMANN, HD ;

WAGNER, H .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 29 (03) :113-124

[9] ELECTRON ORBITAL ENERGIES OF OXYGEN ADSORBED ON SILICON SURFACES AND OF SILICON DIOXIDE [J].

IBACH, H ;

ROWE, JE .

PHYSICAL REVIEW B, 1974, 10 (02) :710-718

[10] LOW-ENERGY ELECTRON DIFFRACTION STUDY OF SILICON SURFACE STRUCTURES [J].

LANDER, JJ ;

MORRISON, J .

JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (04) :729-&

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