IMPACT IONIZATION IN (100)-ORIENTED, (110)-ORIENTED, AND (111)-ORIENTED INP AVALANCHE PHOTO-DIODES

被引：53

作者：

ARMIENTO, CA ^{[1
]}

GROVES, SH ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 02期

关键词：

D O I：

10.1063/1.94279

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：198 / 200

页数：3

共 25 条

[1]

[Anonymous], 1977, SEMICONDUCTORS SEMIM

[2] IONIZATION COEFFICIENTS OF ELECTRONS AND HOLES IN INP [J].

ARMIENTO, CA ;

GROVES, SH ;

HURWITZ, CE .

APPLIED PHYSICS LETTERS, 1979, 35 (04) :333-335

[3]

ARMIENTO CA, 1983, THESIS MASSACHUSETTS

[4] ENHANCEMENT OF ELECTRON-IMPACT IONIZATION IN A SUPER-LATTICE - A NEW AVALANCHE PHOTO-DIODE WITH A LARGE IONIZATION RATE RATIO [J].

CAPASSO, F ;

TSANG, WT ;

HUTCHINSON, AL ;

WILLIAMS, GF .

APPLIED PHYSICS LETTERS, 1982, 40 (01) :38-40

[5] HOT-ELECTRON DYNAMICS IN GAAS AVALANCHE DEVICES - COMPETITION BETWEEN BALLISTIC BEHAVIOR AND INTERVALLEY SCATTERING [J].

CAPASSO, F ;

NAHORY, RE ;

POLLACK, MA .

SOLID-STATE ELECTRONICS, 1979, 22 (11) :977-979

[6] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

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COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (02) :556-582

[7] ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN INP DETERMINED BY PHOTOMULTIPLICATION MEASUREMENTS [J].

COOK, LW ;

BULMAN, GE ;

STILLMAN, GE .

APPLIED PHYSICS LETTERS, 1982, 40 (07) :589-591

[8] AVALANCHE MULTIPLICATION AND NOISE CHARACTERISTICS OF LOW-DARK-CURRENT GAINASP-INP AVALANCHE PHOTODETECTORS [J].

DIADIUK, V ;

GROVES, SH ;

HURWITZ, CE .

APPLIED PHYSICS LETTERS, 1980, 37 (09) :807-810

[9] SURFACE PASSIVATION TECHNIQUES FOR INP AND INGAASP P-N-JUNCTION STRUCTURES [J].

DIADIUK, V ;

ARMIENTO, CA ;

GROVES, SH ;

HURWITZ, CE .

ELECTRON DEVICE LETTERS, 1980, 1 (09) :177-178

[10] DIFFUSION LENGTH OF MOLES IN N-INP [J].

DIADIUK, V ;

GROVES, SH ;

ARMIENTO, CA ;

HURWITZ, CE .

APPLIED PHYSICS LETTERS, 1983, 42 (10) :892-894

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