GROWTH OF SI ON AU DEPOSITED SI(111) SURFACES STUDIED BY UHV-REM

被引：20
|
作者：
MINODA, H
TANISHIRO, Y
YAMAMOTO, N
YAGI, K
机构：
[1] Physics Department, Tokyo Institute of Technology, Meguro, Tokyo, 152, Oh-okayama
来源：
APPLIED SURFACE SCIENCE | 1992年 / 60-1卷
关键词：
D O I：
10.1016/0169-4332(92)90402-J
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Growth of Si on Au-deposited Si(111)5 x 2 surfaces was studied by ultra-high-vacuum reflection electron microscopy. Above 400-degrees-C RHEED showed the 5 x 2 pattern during the Si deposition indicating that the Au deposits stayed at the top surface during deposition. Suppression of two-dimensional nucleation of Si to some extent was noted. Preferential nucleation of 2D islands at orientational domain boundaries of the 5 x 2 structure was observed.
引用
收藏
页码：107 / 111
页数：5
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