GROWTH OF SI ON AU DEPOSITED SI(111) SURFACES STUDIED BY UHV-REM

被引：20

作者：

MINODA, H

TANISHIRO, Y

YAMAMOTO, N

YAGI, K

机构：

[1] Physics Department, Tokyo Institute of Technology, Meguro, Tokyo, 152, Oh-okayama

来源：

APPLIED SURFACE SCIENCE | 1992年 / 60-1卷

关键词：

D O I：

10.1016/0169-4332(92)90402-J

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Growth of Si on Au-deposited Si(111)5 x 2 surfaces was studied by ultra-high-vacuum reflection electron microscopy. Above 400-degrees-C RHEED showed the 5 x 2 pattern during the Si deposition indicating that the Au deposits stayed at the top surface during deposition. Suppression of two-dimensional nucleation of Si to some extent was noted. Preferential nucleation of 2D islands at orientational domain boundaries of the 5 x 2 structure was observed.

引用

页码：107 / 111

页数：5

共 10 条

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