MAGNITUDE AND PHASE CHARACTERISTICS OF FREQUENCY-MODULATION IN DIRECTLY MODULATED GAALAS SEMICONDUCTOR DIODE-LASERS

被引：38
作者：
WELFORD, D
ALEXANDER, SB
机构：
来源：
JOURNAL OF LIGHTWAVE TECHNOLOGY | 1985年 / 3卷 / 05期
关键词：
D O I：
10.1109/JLT.1985.1074298
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1092 / 1099
页数：8
相关论文
共 18 条
[1]   TRANSVERSE MODE STABILIZED ALX GA1-XAS INJECTION-LASERS WITH CHANNELED-SUBSTRATE-PLANAR STRUCTURE [J].
AIKI, K ;
NAKAMURA, M ;
KURODA, T ;
UMEDA, J ;
ITO, R ;
CHINONE, N ;
MAEDA, M .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (02) :89-94
[2]  
ALEXANDER S, UNPUB
[3]  
CHAN VWS, 1984, JUN C LAS EL OPT WAS
[4]   HIGHLY EFFICIENT (GAAL)AS BURIED-HETEROSTRUCTURE LASERS WITH BURIED OPTICAL GUIDE [J].
CHINONE, N ;
SAITO, K ;
ITO, R ;
AIKI, K ;
SHIGE, N .
APPLIED PHYSICS LETTERS, 1979, 35 (07) :513-516
[5]   DIRECT FREQUENCY-MODULATION IN ALGAAS SEMICONDUCTOR-LASERS [J].
KOBAYASHI, S ;
YAMAMOTO, Y ;
ITO, M ;
KIMURA, T .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (04) :582-595
[6]   15 MW SINGLE-MODE CW OPERATION OF CRANK STRUCTURE TJS']JS LASER-DIODES AT HIGH-TEMPERATURE [J].
KUMABE, H ;
TANAKA, T ;
NITA, S ;
SEIWA, Y ;
SOGO, T ;
TAKAMIYA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) :347-351
[7]   THE CARRIER-INDUCED INDEX CHANGE IN ALGAAS AND 1.3 MU-M INGAASP DIODE-LASERS [J].
MANNING, J ;
OLSHANSKY, R ;
SU, CB .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (10) :1525-1530
[8]   FEEDBACK THEORY - SOME PROPERTIES OF SIGNAL FLOW GRAPHS [J].
MASON, SJ .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1953, 41 (09) :1144-1156
[9]  
OLESEN H, 1982, 8TH P EUR C OPT COMM
[10]   OPTICAL FSK HETERODYNE-DETECTION EXPERIMENTS USING SEMICONDUCTOR-LASER TRANSMITTER AND LOCAL OSCILLATOR [J].
SAITO, S ;
YAMAMOTO, Y ;
KIMURA, T .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (06) :935-941
12