TOPOLOGY OF SILICON STRUCTURES WITH RECESSED SIO2

被引：102

作者：

BASSOUS, E ^{[1
]}

YU, HN ^{[1
]}

MANISCALCO, V ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 11期

关键词：

D O I：

10.1149/1.2132680

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1729 / 1737

页数：9

共 23 条

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