ELECTRON ENERGY-LOSS SPECTROSCOPY OF GAAS AND GE SURFACES

被引：152

作者：

LUDEKE, R ^{[1
]}

ESAKI, L ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW LETTERS | 1974年 / 33卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.33.653

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：653 / 656

页数：4

共 11 条

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[2] STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHANG, LL ;

ESAKI, L ;

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SCHUL, G .

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[3] ELECTRONIC-STRUCTURE OF GAAS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW LETTERS, 1974, 32 (12) :674-677

[4] SURFACE STRUCTURES AND PHOTOLUMINESCENCE OF MOLECULAR BEAM EPITAXIAL FILMS OF GAAS [J].

CHO, AY ;

HAYASHI, I .

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[5]

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PHYSICAL REVIEW B, 1974, 9 (04) :1951-1957

[7] TOTAL VALENCE-BAND DENSITIES OF STATES OF III-V AND II-VI COMPOUNDS FROM X-RAY PHOTOEMISSION SPECTROSCOPY [J].

LEY, L ;

POLLAK, RA ;

MCFEELY, FR ;

KOWALCZY.SP ;

SHIRLEY, DA .

PHYSICAL REVIEW B, 1974, 9 (02) :600-621

[8] GA1-XALXAS SUPERLATTICES PROFILED BY AUGER-ELECTRON SPECTROSCOPY [J].

LUDEKE, R ;

ESAKI, L ;

CHANG, LL .

APPLIED PHYSICS LETTERS, 1974, 24 (09) :417-419

[9]

LUDEKE R, TO BE PUBLISHED

[10] SURFACE-STATE TRANSITIONS OF SILICON IN ELECTRON ENERGY-LOSS SPECTRA [J].

ROWE, JE ;

IBACH, H .

PHYSICAL REVIEW LETTERS, 1973, 31 (02) :102-105

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