RAPID-THERMAL-OXIDIZED POROUS SI - THE SUPERIOR PHOTOLUMINESCENT SI

被引：381

作者：

PETROVAKOCH, V ^{[1
]}

MUSCHIK, T ^{[1
]}

KUX, A ^{[1
]}

MEYER, BK ^{[1
]}

KOCH, F ^{[1
]}

LEHMANN, V ^{[1
]}

机构：

[1] SIEMENS RES LABS,W-8000 MUNICH,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 08期

关键词：

D O I：

10.1063/1.107736

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To improve the stability of porous Si (PS) prepared by electrochemical etching, we make use of rapid-thermal oxidation (RTO). During RTO processing, the hydride coverage of the internal surfaces of the pores is replaced by a high-quality oxide while retaining nm-sized Si grains. With increasing process temperature T(ox) the luminescence is first quenched. It is recovered with comparable intensity for T(ox) greater-than-or-equal-to 700-degrees-C.

引用

收藏

页码：943 / 945

页数：3

相关论文

共 12 条

[1] THE ORIGIN OF VISIBLE LUMINESCENCE FROM POROUS SILICON - A NEW INTERPRETATION [J].

BRANDT, MS ;

FUCHS, HD ;

STUTZMANN, M ;

WEBER, J ;

CARDONA, M .

SOLID STATE COMMUNICATIONS, 1992, 81 (04) :307-312

[2] ATMOSPHERIC IMPREGNATION OF POROUS SILICON AT ROOM-TEMPERATURE [J].

CANHAM, LT ;

HOULTON, MR ;

LEONG, WY ;

PICKERING, C ;

KEEN, JM .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (01) :422-431

[3] HYDROGEN DESORPTION-KINETICS FROM MONOHYDRIDE AND DIHYDRIDE SPECIES ON SILICON SURFACES [J].

GUPTA, P ;

COLVIN, VL ;

GEORGE, SM .

PHYSICAL REVIEW B, 1988, 37 (14) :8234-8243

[4] ELECTROLUMINESCENCE IN THE VISIBLE RANGE DURING ANODIC-OXIDATION OF POROUS SILICON FILMS [J].

HALIMAOUI, A ;

OULES, C ;

BOMCHIL, G ;

BSIESY, A ;

GASPARD, F ;

HERINO, R ;

LIGEON, M ;

MULLER, F .

APPLIED PHYSICS LETTERS, 1991, 59 (03) :304-306

[5]

ITO T, 1992, MATER RES SOC SYMP P, V256, P127

[6] POROUS SILICON FORMATION - A QUANTUM WIRE EFFECT [J].

LEHMANN, V ;

GOSELE, U .

APPLIED PHYSICS LETTERS, 1991, 58 (08) :856-858

[7]

PETROVAKOCH V, 1992, MATER RES SOC SYMP P, V256, P41

[8] CONTROL OF POROUS SI PHOTOLUMINESCENCE THROUGH DRY OXIDATION [J].

SHIH, S ;

TSAI, C ;

LI, KH ;

JUNG, KH ;

CAMPBELL, JC ;

KWONG, DL .

APPLIED PHYSICS LETTERS, 1992, 60 (05) :633-635

[9] LUMINESCENCE DEGRADATION IN POROUS SILICON [J].

TISCHLER, MA ;

COLLINS, RT ;

STATHIS, JH ;

TSANG, JC .

APPLIED PHYSICS LETTERS, 1992, 60 (05) :639-641

[10] THERMAL-TREATMENT STUDIES OF THE PHOTOLUMINESCENCE INTENSITY OF POROUS SILICON [J].

TSAI, C ;

LI, KH ;

SARATHY, J ;

SHIH, S ;

CAMPBELL, JC ;

HANCE, BK ;

WHITE, JM .

APPLIED PHYSICS LETTERS, 1991, 59 (22) :2814-2816