ELECTRON-ACOUSTIC PHONON-SCATTERING IN SIO2 DETERMINED FROM A PSEUDO-POTENTIAL FOR ENERGIES OF E GREATER-THAN EBZ

The existing description of hot electron transport in silicon dioxide contains the deficiency that the resulting electron inverse mean free paths and loss rates associated with electron-acoustic phonon scattering continue to increase in an unphysical way at energies above E(gap). One can remove that discrepancy by introducing a pseudo-potential which reflects the screened atom characteristic of higher energy electron-lattice interactions. The low energy, low q scattering, described in terms of the deformation potential, is then recovered, intact, in the low q limit. The use of the screened Coulomb potential introduces no adjustable parameters and results in an acoustic scattering cross section which approaches the phase shift derived elastic scattering cross section at E > E(gap).