THERMAL NOISE MEASUREMENTS IN GAAS-MESFETS

被引:7
作者
FOLKES, PA
机构
关键词
D O I
10.1109/EDL.1985.26252
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:620 / 622
页数:3
相关论文
共 9 条
[2]  
BAECHTOLD W, 1972, IEEE T ELECTRON DEVI, V14, P674
[3]   DETERMINATION OF THE BASIC DEVICE PARAMETERS OF A GAAS-MESFET [J].
FUKUI, H .
BELL SYSTEM TECHNICAL JOURNAL, 1979, 58 (03) :771-797
[4]   OPTIMAL NOISE-FIGURE OF MICROWAVE GAAS-MESFETS [J].
FUKUI, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) :1032-1037
[5]   A NEW INTERPRETATION OF END RESISTANCE MEASUREMENTS [J].
LEE, K ;
SHUR, M ;
LEE, KW ;
VU, T ;
ROBERTS, P ;
HELIX, M .
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (01) :5-7
[6]   NOISE CAUSED BY GAAS-MESFETS IN OPTICAL RECEIVERS [J].
OGAWA, K .
BELL SYSTEM TECHNICAL JOURNAL, 1981, 60 (06) :923-928
[7]  
Pucel RA, 1975, ADV ELECTRONICS ELEC, V38, P195, DOI DOI 10.1016/S0065-2539(08)61205-6
[8]  
Van Der Ziel A., 1970, NOISE SOURCES CHARAC
[9]  
VANDERZIEL A, 1962, P IRE, V50, P1808