A HYDROGEN SENSITIVE PD-MOS STRUCTURE WORKING OVER A WIDE PRESSURE RANGE

被引：33

作者：

DANNETUN, HM

PETERSSON, LG

SODERBERG, D

LUNDSTROM, I

机构：

来源：

APPLIED SURFACE SCIENCE | 1984年 / 17卷 / 03期

关键词：

D O I：

10.1016/0378-5963(84)90014-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：259 / 264

页数：6

共 15 条

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[3] HYDROGEN INDUCED CHANGES IN THE ELECTRONIC-STRUCTURE OF THE PALLADIUM-HYDROGEN SYSTEM AS MEASURED BY THERMOREFLECTANCE
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[5] HYDROGEN-SENSITIVE MOS FIELD-EFFECT TRANSISTOR
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[7] HYDROGEN SENSITIVE MOS-STRUCTURES .2. CHARACTERIZATION
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[8] LUNDSTROM I, 1977, SURF SCI, V64, P497, DOI 10.1016/0039-6028(77)90059-0
[9] HYDROGEN-SENSITIVE PD-GATE MOS-TRANSISTOR
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[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) : 3876 - 3881
[10] HYDROGEN DISSOCIATION ON CLEAN AND CONTAMINATED PD STUDIED WITH A PD-MOS STRUCTURE AND PHOTO-ELECTRON SPECTROSCOPY
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KARLSSON, SE
LUNDSTROM, I
[J]. SURFACE SCIENCE, 1982, 117 (1-3) : 676 - 684

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