THERMAL-REACTION OF TI EVAPORATED ON GAAS

被引：52

作者：

WADA, O ^{[1
]}

YANAGISAWA, S ^{[1
]}

TAKANASHI, H ^{[1
]}

机构：

[1] FIJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 04期

关键词：

D O I：

10.1063/1.89039

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：263 / 265

页数：3

共 10 条

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CHANG, CC ;

MURARKA, SP ;

KUMAR, V ;

QUINTANA, G .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (10) :4237-4243

[2] REACTION-RATES FOR PT ON GAAS [J].

COLEMAN, DJ ;

WISSEMAN, WR ;

SHAW, DW .

APPLIED PHYSICS LETTERS, 1974, 24 (08) :355-357

[3]

GYULAI J, 1975, J APPL PHYS, V46, P4237

[4]

KIM HB, 1975, 1974 P INT C GAAS RE, P307

[5] REACTION OF SPUTTERED PT FILMS ON GAAS [J].

KUMAR, V .

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[6] FORWARD IV CHARACTERISTICS OF PT-N-GAAS SCHOTTKY-BARRIER CONTACTS [J].

MURARKA, SP .

SOLID-STATE ELECTRONICS, 1974, 17 (09) :985-991

[7] EFFECT OF ALLOYING BEHAVIOR ON ELECTRICAL CHARACTERISTICS OF N-GAAS SCHOTTKY DIODES METALLIZED WITH W, AU, AND PT [J].

SINHA, AK ;

POATE, JM .

APPLIED PHYSICS LETTERS, 1973, 23 (12) :666-668

[8] SINTERED OHMIC CONTACTS TO N-TYPE AND P-TYPE GAAS [J].

SINHA, AK ;

SMITH, TE ;

LEVINSTEIN, HJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (05) :218-224

[9]

SINHA AK, 1975, APPL PHYS LETT, V24, P171

[10]

SZE SM, 1969, PHYSICS SEMICONDUCTO

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