BIPOLAR-TRANSISTOR ACTION IN CADMIUM MERCURY TELLURIDE

被引：5

|

作者：

ASHLEY, T ^{[1
]}

CRIMES, G ^{[1
]}

ELLIOT, CT ^{[1
]}

HARKER, AT ^{[1
]}

机构：

[1] MULLARD LTD,SOUTHAMPTON S09 7BH,HANTS,ENGLAND

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 11期

关键词：

D O I：

10.1049/el:19860416

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：611 / 613

页数：3

相关论文

共 50 条

[1] NEAR-AMBIENT-TEMPERATURE BIPOLAR-TRANSISTOR IN CADMIUM MERCURY TELLURIDE
ASHLEY, T
ELLIOTT, CT
WHITE, AM
CRIMES, GJ
HARKER, AT
ELECTRONICS LETTERS, 1987, 23 (24) : 1280 - 1281
[2] BIPOLAR-TRANSISTOR ACTION IN ION-IMPLANTED DIAMOND
PRINS, JF
APPLIED PHYSICS LETTERS, 1982, 41 (10) : 950 - 952
[3] BIPOLAR-TRANSISTOR MODEL
COTTIN, P
ONDE ELECTRIQUE, 1976, 56 (12): : 505 - 513
[4] BIPOLAR-TRANSISTOR ACTION AND TRANSPORT EFFECTS RELATING TO CMOS LATCHUP
KRIEGER, G
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (08) : 1719 - 1728
[5] CURRENT GAIN OF THE BIPOLAR-TRANSISTOR
WU, CY
JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 5030 - 5037
[6] A TUNNELING EMITTER BIPOLAR-TRANSISTOR
XU, JM
SHUR, M
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (07) : 416 - 418
[7] THE APPLICATION OF THE ETD BIPOLAR-TRANSISTOR
WUIDART, L
ELECTRONIC ENGINEERING, 1988, 60 (733): : 43 - &
[8] EARLY VOLTAGE OF A BIPOLAR-TRANSISTOR
MALONE, FD
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (02) : 167 - 168
[9] BIPOLAR-TRANSISTOR ACTION FROM AN AMORPHOUS CARBON/SILICON HETEROJUNCTION EMITTER
CHAN, KK
AMARATUNGA, GAJ
SHAFI, ZA
ASHBURN, P
WONG, SP
DIAMOND AND RELATED MATERIALS, 1993, 2 (11) : 1445 - 1448
[10] DIFFUSED PLANAR INP BIPOLAR-TRANSISTOR WITH A CADMIUM-OXIDE FILM EMITTER
SU, LM
GROTE, N
SCHMITT, F
ELECTRONICS LETTERS, 1984, 20 (18) : 716 - 717

← 1 2 3 4 5 →