BIPOLAR-TRANSISTOR ACTION IN CADMIUM MERCURY TELLURIDE

被引:5
作者
ASHLEY, T [1 ]
CRIMES, G [1 ]
ELLIOT, CT [1 ]
HARKER, AT [1 ]
机构
[1] MULLARD LTD,SOUTHAMPTON S09 7BH,HANTS,ENGLAND
关键词
D O I
10.1049/el:19860416
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:611 / 613
页数:3
相关论文
共 3 条
[1]  
BAKER IM, 1983, IEE C PUBL, V228, P12
[2]   N-CHANNEL MOS-TRANSISTORS IN MERCURY-CADMIUM-TELLURIDE [J].
KOLODNY, A ;
SHACHAMDIAMAND, YJ ;
KIDRON, I .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (03) :591-595
[3]   N-CHANNEL INSULATED-GATE FIELD-EFFECT TRANSISTORS IN HG1-XCDXTE WITH X=0.215 [J].
NEMIROVSKY, Y ;
MARGALIT, S ;
KIDRON, I .
APPLIED PHYSICS LETTERS, 1980, 36 (06) :466-468