DIAMOND SYNTHESIS FROM THE GAS-PHASE

被引:5
作者
KAMO, M
SATO, Y
机构
[1] National Institute for Research in inorganic materials, Tsukuba, Ibaraki, 305
来源
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 1991年 / 23卷
关键词
D O I
10.1016/0960-8974(92)90018-L
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
This paper reviews structural features and some properties of diamond prepared from the gas phase. Single crystalline diamond films are grown on (100), (110) and (111) faces of diamond, and analyzed using secondary ion mass spectrometer. The results indicate that the contamination from a reaction vessel cannot be neglected, and that other impurities with concentration higher than that in natural diamond were not detected. The studies of texture of polycrystalline films deposited on Si by etching in oxidative plasma have revealed that the texture depends on the synthetic conditions. Single crystalline diamond particles and polycrystalline films have been characterized using optical techniques. The results indicate that single crystals prepared under optimum conditions have good crystalline quality similar to type IIa diamond, which is a high purity form in natural diamond. In contrast, the polycrystalline films grown under the same conditions have appreciable amounts of double-bond structures and strain.
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页码:1 / 22
页数:22
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