CURRENT-VOLTAGE CHARACTERISTICS THROUGH GAAS ALGAAS GAAS HETEROBARRIERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引:59
作者
HASE, I
KAWAI, H
KANEKO, K
WATANABE, N
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D O I
10.1063/1.336768
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O59 [应用物理学];
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页码:3792 / 3797
页数:6
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共 19 条
[1]   ELECTRICAL CHARACTERIZATION OF GAAS/ALGAAS SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR CAPACITORS AND APPLICATION TO THE MEASUREMENT OF THE GAAS/ALGAAS BAND-GAP DISCONTINUITY [J].
ARNOLD, D ;
KETTERSON, A ;
HENDERSON, T ;
KLEM, J ;
MORKOC, H .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2880-2885
[2]   ENERGY BAND-GAP DISCONTINUITIES IN GAAS-(AL,GA)AS HETEROJUNCTIONS [J].
BATEY, J ;
WRIGHT, SL ;
DIMARIA, DJ .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :484-487
[3]  
CASEY HC, 1978, HETEROSTRUCTURE LA A, P193
[4]   ELASTIC AND INELASTIC TUNNELING CHARACTERISTICS OF ALAS/GAAS HETEROJUNCTIONS [J].
COLLINS, RT ;
LAMBE, J ;
MCGILL, TC ;
BURNHAM, RD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :597-598
[5]   TUNNELLING THROUGH GAAS-ALXGA1-XAS-GAAS DOUBLE HETEROJUNCTIONS [J].
DELAGEBEAUDEUF, D ;
DELESCLUSE, P ;
ETIENNE, P ;
MASSIES, J ;
LAVIRON, M ;
CHAPLART, J ;
LINH, T .
ELECTRONICS LETTERS, 1982, 18 (02) :85-87
[6]   QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES [J].
DINGLE, R ;
WIEGMANN, W ;
HENRY, CH .
PHYSICAL REVIEW LETTERS, 1974, 33 (14) :827-830
[7]  
Duke C. B., 1969, TUNNELING SOLIDS
[8]  
HASE I, 1984, ELECTRON LETT, V12, P491
[9]  
HASE I, 1985, I PHYS C SER, V79, P613
[10]   NEGATIVE CHARGE, BARRIER HEIGHTS, AND THE CONDUCTION-BAND DISCONTINUITY IN ALXGA1-XAS CAPACITORS [J].
HICKMOTT, TW ;
SOLOMON, PM ;
FISCHER, R ;
MORKOC, H .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2844-2853