THE THERMAL-INSTABILITY OF PEAK CURRENTS IN TUNNEL-DIODES

被引：0
|
作者：
VYATKIN, AP
KALININ, YM
机构：
来源：
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA | 1985年 / 28卷 / 12期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：77 / 82
页数：6
相关论文
共 50 条
  • [1] THERMAL INSTABILITY OF PEAK CURRENT IN TUNNEL DIODES.
    Vyatkin, A.P.
    Kalinin, Yu.M.
    Soviet physics journal, 1985, 28 (12): : 1018 - 1022
  • [2] SCHEME FOR MEASURING THE CHARACTERISTIC CURRENTS AND VOLTAGES OF TUNNEL-DIODES
    CHIRKOV, VP
    MEASUREMENT TECHNIQUES, 1980, 23 (03) : 252 - 253
  • [3] STUDY OF PEAK AND VALLEY CURRENTS IN DOUBLE QUANTUM-WELL RESONANT INTERBAND TUNNEL-DIODES
    XU, JM
    MACDONALD, AG
    IOGANSEN, LV
    DAY, DJ
    SWEENY, M
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (08) : 1097 - 1102
  • [4] INFLUENCE OF DOPANTS ON PEAK CURRENT OF INSB TUNNEL-DIODES
    RZAEV, MA
    FILIPCHENKO, AS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (09): : 1161 - 1162
  • [5] PRESSURE SENSITIVITY OF PEAK CURRENT IN GAAS TUNNEL-DIODES
    ALEKSEEVA, ZM
    VYATKIN, AP
    KRIVOROTOV, NP
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1976, (09): : 74 - 77
  • [6] EXCESS CURRENTS IN TUNNEL-DIODES FROM N-GAAS
    VYATKIN, AP
    GLUSHCHENKO, VA
    PARKHOMENKO, RP
    PASTOR, AP
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1981, (03): : 82 - 86
  • [7] TUNNEL-DIODES BY THE MILLION
    不详
    ELECTRONICS WORLD & WIRELESS WORLD, 1990, 96 (1648): : 94 - 94
  • [8] INFLUENCE OF LATTICE-DEFECTS ON EXCESS CURRENTS IN GAAS TUNNEL-DIODES
    ALEKSEEVA, ZM
    BRUDNYI, VN
    KRIVOV, MA
    KRIVOROTOV, NP
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1976, (09): : 88 - 92
  • [9] TUNNEL-DIODES FLYING HIGH
    HINDIN, HJ
    ELECTRONICS, 1979, 52 (09): : 81 - 82
  • [10] TUNNEL-DIODES IN FAST CIRCUITS
    BALDINGER, E
    NUCLEAR INSTRUMENTS & METHODS, 1963, 20 (JAN): : 309 - 312
12345