HYDROGEN PASSIVATION OF SILICON SHEET SOLAR-CELLS

被引：22

作者：

TSUO, YS

MILSTEIN, JB

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 09期

关键词：

D O I：

10.1063/1.95468

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：971 / 973

页数：3

共 10 条

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[2]

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[3] HYDROGEN PASSIVATION OF DEFECTS IN SILICON RIBBON GROWN BY THE EDGE-DEFINED FILM-FED GROWTH-PROCESS [J].

HANOKA, JI ;

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APPLIED PHYSICS LETTERS, 1983, 42 (07) :618-620

[4] SEMI-CONTINUOUS EDGE-SUPPORTED PULLING OF SILICON SHEETS [J].

HURD, JL ;

CISZEK, TF .

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[5] NEUTRALIZATION OF SHALLOW ACCEPTOR LEVELS IN SILICON BY ATOMIC-HYDROGEN [J].

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WANCE, RO .

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[6]

SCHMIDT W, 1982, 16TH P IEEE PHOT SPE, P537

[7] STUDIES OF THE HYDROGEN PASSIVATION OF SILICON GRAIN-BOUNDARIES [J].

SEAGER, CH ;

GINLEY, DS .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :1050-1055

[8]

SINGH R, 1984, 5TH P EUR PHOT SOL E, P1064

[9] ELECTRON CHANNELING AND EBIC STUDIES OF EDGE-SUPPORTED PULLING SILICON SHEETS [J].

TSUO, YS ;

HURD, JL ;

MATSON, RJ ;

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[10]

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