Preparation and characterization of V2O5 doped SiO2-TiO2 thin films

被引：8

作者：

Nocun, Marek ^{[1
]}

Kwasny, Slawomir ^{[1
]}

机构：

[1] AGH Univ Sci & Technol, Dept Mat Sci & Ceram, Al Mickiewicza 30, PL-30059 Krakow, Poland

来源：

OPEN ENGINEERING | 2012年 / 2卷 / 01期

关键词：

Sol-gel; Thin film; Doping; Vanadium; SiO2/; TiO2; Optical properties;

D O I：

10.2478/s13531-011-0041-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In our investigation, V doped SiO2/TiO2 thin films were prepared on glass substrates by dip coating sol-gel technique. Chemical composition of the samples was studied by X-ray photoelectron spectroscopy (XPS). Transmittance of the samples was characterized using UV-VIS spectrophotometry. Subsequently band-gap energy (Eg) was estimated for these films. Powders obtained from sols were characterized by FTIR spectroscopy. It was found that vanadium decreases optical band gap of SSiO2/TiO2 films.

引用

页码：123 / 128

页数：6

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