Preparation and characterization of V2O5 doped SiO2-TiO2 thin films

被引：8
作者：
Nocun, Marek [1 ]
Kwasny, Slawomir [1 ]
机构：
[1] AGH Univ Sci & Technol, Dept Mat Sci & Ceram, Al Mickiewicza 30, PL-30059 Krakow, Poland
来源：
OPEN ENGINEERING | 2012年 / 2卷 / 01期
关键词：
Sol-gel; Thin film; Doping; Vanadium; SiO2/; TiO2; Optical properties;
D O I：
10.2478/s13531-011-0041-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In our investigation, V doped SiO2/TiO2 thin films were prepared on glass substrates by dip coating sol-gel technique. Chemical composition of the samples was studied by X-ray photoelectron spectroscopy (XPS). Transmittance of the samples was characterized using UV-VIS spectrophotometry. Subsequently band-gap energy (Eg) was estimated for these films. Powders obtained from sols were characterized by FTIR spectroscopy. It was found that vanadium decreases optical band gap of SSiO2/TiO2 films.
引用
收藏
页码：123 / 128
页数：6
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