DETERMINATION OF THICKNESS AND REFRACTIVE-INDEX OF THIN TRANSPARENT MULTILAYER FILMS ON SILICON FROM ELLIPSOMETRIC DATA

被引：0

作者：

DOHERTY, JG ^{[1
]}

RYAN, WD ^{[1
]}

机构：

[1] QUEENS UNIV,DEPT ELECT & ELECTR ENGN,BELFAST BT7 1NN,NORTH IRELAND

来源：

PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON | 1975年 / 122卷 / 10期

关键词：

SEMICONDUCTING SILICON - Computer Applications;

D O I：

10.1049/piee.1975.0269

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ellipsometry is commonly employed to evaluate the thicknesses and refractive indices of thin films grown on silicon. To obviate the use of relatively inaccurate graphical techniques in the calculation of film parameters from ellipsometer readings, a computer program, which solves the appropriate equations iteratively, has been written. The program, in Fortran IV, which was developed, primarily, for interactive-mode operation, makes efficient use of computer core and time, and can handle measurements taken from transparent films, comprising up to 50 layers, grown from, or deposited on, silicon substrates.

引用

页码：1093 / 1094

页数：2