LIGHT-EMISSION AT ROOM-TEMPERATURE FROM SI/CAF2 MULTILAYERS

被引：32

作者：

DAVITAYA, FA ^{[1
]}

VERVOORT, L ^{[1
]}

BASSANI, F ^{[1
]}

OSSICINI, S ^{[1
]}

FASOLINO, A ^{[1
]}

BERNARDINI, F ^{[1
]}

机构：

[1] UNIV MODENA,DIPARTIMENTO FIS,I-41100 MODENA,ITALY

来源：

EUROPHYSICS LETTERS | 1995年 / 31卷 / 01期

关键词：

D O I：

10.1209/0295-5075/31/1/005

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have synthesized, by Molecular Beam Epitaxy (MBE), Si/CaF2 multilayers which are optically active at room temperature. The photoluminescence spectra present a blue shift far decreasing Si layer thickness, in analogy to those obtained from porous silicon when the porosity is increased. We find a critical dependence of the photoluminescence efficiency on the thickness of the Si layers. We compare the experimental results to ab initio calculations of the band structure of Si/CaF2 multilayers which predict the band gap opening and the presence of confined and interface states leading to a quasi-direct band gap.

引用

页码：25 / 30

页数：6

共 27 条

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[2]

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