ZNTE GROWTH BY PHOTO-ASSISTED METALORGANIC VAPOR-PHASE EPITAXY AT ATMOSPHERIC-PRESSURE

被引：10

作者：

IKEJIRI, M ^{[1
]}

NAKAYAMA, H ^{[1
]}

NISHIO, M ^{[1
]}

OGAWA, H ^{[1
]}

YOSHIDA, A ^{[1
]}

机构：

[1] INST MOLEC SCI,OKAZAKI,AICHI 444,JAPAN

来源：

APPLIED SURFACE SCIENCE | 1993年 / 70-1卷

关键词：

D O I：

10.1016/0169-4332(93)90616-J

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The effects of illumination wavelength, carrier gas and alkyl zinc source upon the growth rate of a ZnTe layer have been investigated by Ar+ ion laser or xenon lamp-assisted metalorganic vapor phase epitaxy. The growth rate is greatly enhanced when light is used with photon energies higher than the band gap of ZnTe. The increase in growth rate is smaller for He than for H-2. The combination of dimethyl zinc and diethyl telluride is more effective for the growth rate enhancement than that of diethyl zinc and diethyl telluride.

引用

页码：755 / 758

页数：4

共 8 条

[1] CHARACTERISTICS OF LASER METALORGANIC VAPOR-PHASE EPITAXY IN GAAS [J].