MONOLITHIC 2-DIMENSIONAL GAAS ALGAAS LASER ARRAYS FABRICATED BY CHLORINE ION-BEAM-ASSISTED MICROMACHINING

被引:19
作者
GOODHUE, WD
RAUSCHENBACH, K
WANG, CA
DONNELLY, JP
BAILEY, RJ
JOHNSON, GD
机构
[1] Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts
关键词
GaAs/AIGaAs; ion-beam-assisted etching; laser arrays; semiconductor diodelasers;
D O I
10.1007/BF02658007
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Chlorine ion-beam-assisted etching (IBAE) has been used to micromachine laser facets and deflecting mirrors for monolithic two-dimensional GaAs/AIGaAs laser arrays. Three laser cavity/deflector designs have been successfully implemented. The first utilizes a parabolic deflecting mirror to directly focus the laser radiation; the second consists of a folded cavity with a vertical facet, a top surface facet, and an internal 45° reflector; and the third has a folded cavity with an internal Al0.2Ga0.8As/Al0.8Ga0.2As dielectric mirror stack and a top surface facet formed in a single etch step with two internal 45° reflectors. The parabolic deflecting mirrors are currently modeled for f- 0.8 collection efficiency, making the first design attractive in incoherent arrays for high-power applications such as pumping Nd:YAG lasers. The other two structures are of interest for incoherent or coherent arrays used in high- and medium-power applications, since the top surface facets can easily be antireflection coated. The design with a dielectric mirror stack is particularly simple to fabricate. © 1990 The Mineral, Metal & Materials Society, Inc.
引用
收藏
页码:463 / 469
页数:7
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