PARAMETER EXTRACTION FROM NONIDEAL C-V CHARACTERISTICS OF A SCHOTTKY DIODE WITH AND WITHOUT INTERFACIAL LAYER

被引：148

作者：

TURUT, A ^{[1
]}

YALCIN, N ^{[1
]}

SAGLAM, M ^{[1
]}

机构：

[1] ERCIYES UNIV,FEN EDEBIYAT FAK,FIZIK BOLUMU,KAYSERI,TURKEY

来源：

SOLID-STATE ELECTRONICS | 1992年 / 35卷 / 06期

关键词：

D O I：

10.1016/0038-1101(92)90286-L

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, we have attempted to interpret experimentally observed non-ideal Al-pSi Schottky diode I-V and C-2-V characteristics which are due to an interface layer, interface states and fixed surface charge. A value of 0.68 eV for the barrier height q-PHI(Bo) for Al-pSi diodes without interface layer and fixed surface charge has been obtained from C-2-V characteristics and a value of 0.20 eV for the neutral level of the surface states has been found. Furthermore, the value of the barrier height q-PHI(Bp) without fixed surface charge and the effective barrier height q-PHI(Bp,o) are separately obtained from C-2-V characteristics. In addition, values of interface state density D(it) have been calculated.

引用

页码：835 / 841

页数：7

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