SIDE GATING IN DELTA-DOPED QUANTUM WIRES

被引：17

作者：

FENG, Y

THORNTON, TJ

HARRIS, JJ

WILLIAMS, D

机构：

[1] IRC SEMICOND MAT,BLACKETT LAB,LONDON SW7 2BZ,ENGLAND

[2] HITACHI CAMBRIDGE LAB,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 01期

关键词：

D O I：

10.1063/1.107386

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used a side gating technique to vary the width of narrow wires made from delta-doped GaAs. The wires show pronounced quantum interference effects which can be used to determine the wire width and electron phase coherence length as a function of gate voltage. At zero gate bias the depletion from the etched surfaces is very small because of the high electron density and the electrical width of the wires is therefore only slightly smaller than the physical width.

引用

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页码：94 / 96

页数：3

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