AU(PT)PD OHMIC CONTACTS TO P-ZNTE

被引：46
作者：
OZAWA, M
HIEI, F
ISHIBASHI, A
AKIMOTO, K
机构：
[1] SONY Corporation Research Center, Yokohama 240
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 05期
关键词：
OHMIC CONTACTS; II-VI SEMICONDUCTORS;
D O I：
10.1049/el:19930337
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Au(Pt)Pd ohmic contacts to p-ZnTe are reported, with a determination of the optimum annealing temperature and the optimum Pd layer thickness. The specific contact resistance, measured by the transmission line method, was as low as 5 x 10(-6) OMEGA cm-2. This value of the specific contact resistance is two orders of magnitude lower than that of Au or Au/Pt contact to p-ZnTe.
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页码：503 / 505
页数：3
相关论文
共 10 条
[1]   MODELS FOR CONTACTS TO PLANAR DEVICES [J].
BERGER, HH .
SOLID-STATE ELECTRONICS, 1972, 15 (02) :145-&
[2]  
ITOH S, 1992, JPN J APPL PHYS, V31, pL1316
[3]   NONALLOYED OHMIC CONTACTS TO N-GAAS BY SOLID-PHASE EPITAXY OF GE [J].
MARSHALL, ED ;
ZHANG, B ;
WANG, LC ;
JIAO, PF ;
CHEN, WX ;
SAWADA, T ;
LAU, SS ;
KAVANAGH, KL ;
KUECH, TF .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) :942-947
[4]   WORK FUNCTION OF ELEMENTS AND ITS PERIODICITY [J].
MICHAELSON, HB .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) :4729-4733
[5]   CHARACTERISTICS OF P-TYPE ZNSE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY WITH RADICAL DOPING [J].
OHKAWA, K ;
KARASAWA, T ;
MITSUYU, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (2A) :L152-L155
[6]   P-TYPE ZNSE BY NITROGEN ATOM BEAM DOPING DURING MOLECULAR-BEAM EPITAXIAL-GROWTH [J].
PARK, RM ;
TROFFER, MB ;
ROULEAU, CM ;
DEPUYDT, JM ;
HAASE, MA .
APPLIED PHYSICS LETTERS, 1990, 57 (20) :2127-2129
[7]   HEAVILY DOPED P-ZNSE-N GROWN BY MOLECULAR-BEAM EPITAXY [J].
QIU, J ;
DEPUYDT, JM ;
CHENG, H ;
HAASE, MA .
APPLIED PHYSICS LETTERS, 1991, 59 (23) :2992-2994
[8]  
Tupenevich P. A., 1974, Instruments and Experimental Techniques, V17, P1509
[9]   PHOTOEMISSION-STUDIES OF INTERFACE CHEMISTRY AND SCHOTTKY BARRIERS FOR ZNSE(100) WITH TI, CO, CU, PD, AG, AU, CE, AND AL [J].
VOS, M ;
XU, F ;
ANDERSON, SG ;
WEAVER, JH ;
CHENG, H .
PHYSICAL REVIEW B, 1989, 39 (15) :10744-10752
[10]   STABLE AND SHALLOW PDLN OHMIC CONTACTS TO N-GAAS [J].
WANG, LC ;
WANG, XZ ;
LAU, SS ;
SANDS, T ;
CHAN, WK ;
KUECH, TF .
APPLIED PHYSICS LETTERS, 1990, 56 (21) :2129-2131
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