ELECTRONIC-PROPERTIES OF A (111) GAAS-ALXGA1-XAS HETEROJUNCTION

被引：8

作者：

MARSH, AC

INKSON, JC

机构：

[1] Univ of Cambridge, Cavendish Lab,, Cambridge, Engl, Univ of Cambridge, Cavendish Lab, Cambridge, Engl

来源：

SOLID STATE COMMUNICATIONS | 1984年 / 52卷 / 12期

关键词：

D O I：

10.1016/0038-1098(84)90505-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1037 / 1039

页数：3

共 9 条

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[8] SELF-CONSISTENT CALCULATIONS OF INTERFACE STATES AND ELECTRONIC-STRUCTURE OF (110) INTERFACES OF GE-GAAS AND ALAS-GAAS [J].

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[9] XPS MEASUREMENT OF GAAS-ALAS HETEROJUNCTION BAND DISCONTINUITIES - GROWTH SEQUENCE DEPENDENCE [J].

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