STRUCTURE AND CHEMICAL-COMPOSITION OF RF-SPUTTERED BORON-NITRIDE FILMS

被引:21
作者
ROTHER, B
WEISSMANTEL, C
机构
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1985年 / 87卷 / 02期
关键词
D O I
10.1002/pssa.2210870242
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:K119 / K121
页数:3
相关论文
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[2]  
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[3]  
ROTHER B, Patent No. 2589541
[4]   LOW-TEMPERATURE DOUBLE-PLASMA PROCESS FOR BN FILMS ON SEMICONDUCTORS [J].
SCHMOLLA, W ;
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[5]  
THOMAS J, 1963, J AM CHEM SOC, V84, P4619
[6]  
WEISSMANTEL C, 1984, UNPUB FILM FORMATION
[7]   RADIO-FREQUENCY SPUTTER DEPOSITED BORON-NITRIDE FILMS [J].
WIGGINS, MD ;
AITA, CR ;
HICKERNELL, FS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :322-325