共 13 条
[2]
Chapman B., 1980, GLOW DISCHARGE PROCE
[4]
THE REACTION OF FLUORINE-ATOMS WITH SILICON
[J].
JOURNAL OF APPLIED PHYSICS,
1981, 52 (05)
:3633-3639
[5]
REACTIVE SPUTTER ETCHING OF SI, SIO2, CR, AL, AND OTHER MATERIALS WITH GAS-MIXTURES BASED ON CF4 AND CL2
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1981, 19 (04)
:1408-1411
[6]
RF SPUTTERING VOLTAGE DIVISION BETWEEN 2 ELECTRODES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1983, 1 (01)
:60-68
[7]
ROLE OF DC SELF-BIAS POTENTIAL IN CONTROL OF RF SPUTTERING
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1974, 11 (01)
:47-51
[8]
REDUCTION OF SUBSTRATE HEATING DURING RF SPUTTERING
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1970, 7 (01)
:198-&
[9]
PROFILE CONTROL BY REACTIVE SPUTTER ETCHING
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1978, 15 (02)
:319-326
[10]
ELECTRICAL CHARACTERIZATION OF RADIO-FREQUENCY SPUTTERING GAS DISCHARGE
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1969, 6 (01)
:120-&