PULSED-LIGHT-INDUCED ANNEALING OF METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON

被引：2

作者：

YOON, JH

机构：

[1] Department of Physics, College of Natural Science, Kangwon National University, Chunchon

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.51.10221

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Annealing of the metastable defects in hydrogenated amorphous silicon (a-Si:H) under pulsed light illumination is reported. It is found that light pulse increases the rate of annealing compared to annealing in the dark, as observed under continuous wave (cw) light. Annealing under cw light with an intensity similar to pulsed light has also been investigated for comparison. Results show that the rate of annealing under pulsed light is lower than under cw light. These results suggest that the rate of the metastable defect creation and the saturation value of the metastable defect density by pulsed light may be higher than by cw light. © 1995 The American Physical Society.

引用

页码：10221 / 10223

页数：3

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[31] Light-induced creation of metastable defects in hydrogenated amorphous silicon carbide [J].

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Baeri, A ;

Foti, G .

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[32] Nanocalorimetric investigation of light-induced metastable defects in hydrogenated amorphous silicon [J].

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MacQueen, L ;

Yelon, A ;

Sacher, E ;

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[33] Specificities of light-induced relaxation of metastable defects in amorphous hydrogenated silicon [J].

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[34] Specificities of light-induced relaxation of metastable defects in amorphous hydrogenated silicon [J].

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[35] THERMALLY INDUCED METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON AND SILICON-CARBON ALLOY-FILMS [J].

XU, XX ;

OKUMURA, A ;

MORIMOTO, A ;

KUMEDA, M ;

SHIMIZU, T .

PHYSICAL REVIEW B, 1988, 38 (12) :8371-8376

[36] CORRELATION OF STRESS WITH LIGHT-INDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON FILMS [J].

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APPLIED PHYSICS LETTERS, 1986, 49 (15) :951-953

[37] SPATIAL-DISTRIBUTION OF LIGHT-INDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON [J].

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[38] ROLE OF THE HYDROGEN IN THE LIGHT-INDUCED DEFECTS IN UNDOPED HYDROGENATED AMORPHOUS-SILICON [J].

LABIDI, H ;

ZELLAMA, K ;

GERMAIN, P ;

ASTIER, M ;

LORTIGUES, D ;

BARDELEBEN, JV ;

THEYE, ML ;

CHAHED, L ;

GODET, C .

PHYSICA B, 1991, 170 (1-4) :265-268

[39] LIGHT-INDUCED DEFECTS IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON [J].

OKUSHI, H ;

YAMASAKI, S ;

TANAKA, K .

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[40] THE CARBON IMPURITY DEPENDENCE OF LIGHT-INDUCED METASTABLE EFFECTS IN HYDROGENATED AMORPHOUS-SILICON [J].

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COHEN, JD .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 :603-605

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